The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

May. 29, 2023
Applicant:

Aac Technologies Pte. Ltd., Singapore, SG;

Inventors:

Colin Robert Jenkins, Edinburgh, GB;

Scott Lyall Cargill, Edinburgh, GB;

Euan James Boyd, Edinburgh, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0078 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/0353 (2013.01); B81B 2203/04 (2013.01);
Abstract

An MEMS device, including: a substrate having a back cavity; a diaphragm connected to the substrate and covers the back cavity, the diaphragm includes first and second membranes arranged oppositely, and accommodation space is formed therebetween; a counter electrode in the accommodation space and includes annular beams and first spokes, the annular beams are successively arranged at intervals, and the first spokes extend radially outward from an axis of the counter electrode, an end of the first spokes is connected to the substrate, and two adjacent first spokes and two adjacent annular beams jointly form a first through hole; and a support arranged corresponding to the first through hole, and opposite ends of the support are respectively connected to the first and second membranes. This configuration is more sensitive to sound pressure and is conducive to realizing low-noise microphone while optimizing sensitivity.


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