The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jun. 13, 2023
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Tatsuya Kawase, Tokyo, JP;

Naoki Yoshimatsu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 74/10 (2026.01); H10W 70/40 (2026.01); H10W 72/00 (2026.01); H10W 90/00 (2026.01); H10W 72/30 (2026.01);
U.S. Cl.
CPC ...
H10W 74/127 (2026.01); H10W 70/457 (2026.01); H10W 70/481 (2026.01); H10W 90/00 (2026.01); H10W 90/731 (2026.01); H10W 72/07352 (2026.01); H10W 72/328 (2026.01); H10W 90/736 (2026.01);
Abstract

Provided is a semiconductor device reducing local increase in temperature caused by a void in a bonding material. A semiconductor device includes a conductive member, a semiconductor element, a bonding part, and a lead. The semiconductor element includes a switching element. The semiconductor element is held by the conductive member via a first bonding material. The bonding part is provided on an upper surface of the semiconductor element. The bonding part is electrically connected to an electrode of the switching element other than a gate electrode. The lead is bonded to the bonding part via a second bonding material. The bonding part and the second bonding material are provided in a region including a center part of the upper surface of the semiconductor element.


Find Patent Forward Citations

Loading…