The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Nov. 30, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Tae Yeong Kim, Suwon-si, KR;
Jun Hong Min, Suwon-si, KR;
Eun Suk Jung, Suwon-si, KR;
So Hye Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor package includes a first substrate including silicon, a first insulating layer in contact with the first substrate, the first insulating layer including silicon oxide, the first insulating layer having a first concentration of silicon, a second insulating layer in contact with the first insulating layer, the second insulating layer including silicon oxide, the second insulating layer having a second concentration of silicon, the second concentration lower than the first concentration, and a structure on the second insulating layer. The first concentration is a ratio of a weight of silicon in the first insulating layer to a total weight of the first insulating layer, the second concentration is a ratio of a weight of silicon in the second insulating layer to a total weight of the second insulating layer, and the first concentration is in a range from 20 wt % to 50 wt %.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile