The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jun. 13, 2023
Applicant:

Fujitsu Limited, Kawasaki, JP;

Inventors:

Tsuyoshi Takahashi, Ebina, JP;

Kenichi Kawaguchi, Ebina, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/191 (2006.01); H03F 1/56 (2006.01); H03F 3/04 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10W 20/40 (2026.01); H10W 44/20 (2026.01);
U.S. Cl.
CPC ...
H10W 20/484 (2026.01); H03F 1/56 (2013.01); H03F 3/04 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10W 20/40 (2026.01); H10W 44/20 (2026.01); H03F 2200/222 (2013.01); H03F 2200/387 (2013.01); H10W 44/234 (2026.01);
Abstract

A semiconductor device includes a substrate; a gate electrode, a source electrode, and a drain electrode, the gate electrode, the source electrode and the drain electrode being formed on the substrate; a plurality of nonconductive nanowires formed two-dimensionally on an upper surface of the substrate so as to extend perpendicularly to the upper surface of the substrate; an electrode pad formed at upper ends of the plurality of nanowires so as to have a gap between the electrode pad and the substrate, the electrode pad being supported by the plurality of nanowires; and an extraction electrode connecting the electrode pad and the gate electrode.


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