The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jul. 06, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kyoungwoo Lee, Suwon-si, KR;

Yunsuk Nam, Suwon-si, KR;

Jinkyu Kim, Suwon-si, KR;

Sora You, Suwon-si, KR;

Sungmoon Lee, Suwon-si, KR;

Seungmin Cha, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10W 20/20 (2026.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/85 (2025.01);
Abstract

A semiconductor device may include first active patterns adjacent to each other on a substrate, first source/drain patterns respectively on the first active patterns and adjacent to each other, a first division structure and a second division structure crossing the first active patterns and arranged on the substrate such that adjacent ones of the first source/drain patterns are interposed between the first division structure and the second division structure, a first penetration via between adjacent ones of the first source/drain patterns, a first power line on the first penetration via and electrically connected to the first penetration via, a power delivery network layer on a bottom surface of the substrate, and a first lower penetration via between the power delivery network layer and the first penetration via.


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