The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
May. 31, 2022
University of Kansas, Lawrence, KS (US);
Judy Z. Wu, Lawrence, KS (US);
Ryan W. Goul, Topeka, KS (US);
University of Kansas, Lawrence, KS (US);
Abstract
Memristors are provided, which, in embodiments, comprise a bottom electrode; a top electrode in electrical communication with the bottom electrode, wherein one or both of the bottom and top electrodes is a Schottky electrode; and a dielectric stack between the bottom and top electrodes, the dielectric stack forming a top interface with a bottom surface of the top electrode and a bottom interface with a top surface of the bottom electrode, the dielectric stack comprising a plurality of atomic layer deposition (ALD)-grown atomic sublayers, the plurality comprising an ALD-grown atomic sublayer of a first metal oxide and an ALD-grown atomic sublayer of a second metal oxide. The second metal oxide is different from the first metal oxide and has a greater concentration of oxygen vacancies (V) than the first metal oxide. The dielectric stack has a thickness of no more than about 5 nm.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile