The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Sep. 26, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Joonmyoung Lee, Gwacheon-si, KR;

Whankyun Kim, Seoul, KR;

Eunsun Noh, Yongin-si, KR;

Junho Jeong, Hwaseong-si, KR;

Youngjun Cho, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier pattern includes a first non-magnetic metal and oxygen. The non-magnetic pattern includes a second non-magnetic metal and oxygen. An oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.


Find Patent Forward Citations

Loading…