The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Mar. 03, 2022
Poro Technologies Ltd, Cambridge, GB;
PORO TECHNOLOGIES LTD, Cambridge, GB;
Abstract
A method of controlling bow in a layered semiconductor structure comprises the steps of: providing a layered semiconductor structure comprising a first layer of III-nitride semiconductor material on a substrate, the layered semiconductor structure having a first bow, and forming a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material, in which the layered semiconductor structure comprising the porous region has a second bow different from the first bow. A semiconductor structure having controllable bow comprises a first layer of III-nitride semiconductor material on a substrate, and a porous region of III-nitride semiconductor material over the first layer of III-nitride semiconductor material. The layered semiconductor structure comprising the porous region has a second bow, and the second bow is tunable by tuning a porosity and/or thickness of the porous region.