The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jun. 08, 2021
Applicant:

Ams-osram International Gmbh, Regensburg, DE;

Inventor:

Jens Ebbecke, Helchenbach, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/81 (2025.01); H10H 20/819 (2025.01);
U.S. Cl.
CPC ...
H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/8215 (2025.01);
Abstract

In an embodiment an optoelectronic device includes a layer stack having a circumferential sidewall region and having an n-doped layer, an active region layer deposited on the n-doped layer, the active region layer having a central first portion and a surrounding second portion, a p-doped layer arranged on the active region layer, wherein the surrounding second portion comprises a p-type dopant causing a quantum well intermixing in the surrounding second portion and a thin n-doped surface layer on the circumferential sidewall extending from the n-doped layer substantially towards a top of the p-doped layer thereby forming an artificial pn-junction substantially parallel to the circumferential sidewall region and at least partially within the surrounding second portion and the p-doped layer.


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