The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Dec. 19, 2023
Nikkiso Co., Ltd., Tokyo, JP;
Nikkiso Co., Ltd., Tokyo, JP;
Abstract
Manufacturing a nitride semiconductor light-emitting device includes a depositing an n-type cladding layer and an active layer with a multi-quantum well structure having a plurality of well layers on a substrate in a chamber. In depositing the active layer, a silicon source is not supplied into the chamber. The method includes supplying the silicon source into the chamber after depositing the n-type cladding layer and before depositing the active layer thereby, when a well layer located second from the n-type cladding layer side among the plurality of well layers is defined as a second well layer, a peak of distribution of a silicon concentration in a stacking direction of the n-type cladding layer and the active layer appears in a range where the second well layer is formed, and the silicon concentration at an apex of the peak is not less than 1.49×10atoms/cmand not more than 4.96×10atoms/cm.