The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jun. 07, 2023
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Yoshiki Sakurai, Tokyo, JP;
Daiki Yasuda, Tokyo, JP;
Asahi Kasei Microdevices Corpoation, Tokyo, JP;
Abstract
A compound semiconductor device having a high SNR is provided. A compound semiconductor device () includes an insulating substrate (); a plurality of mesa-type compound semiconductor laminate portions () including a first compound semiconductor layer () having a first conductivity type, an active layer () made of a compound semiconductor material, and a second compound semiconductor layer () having a second conductivity type laminated in this order; a first protective film (); a second protective film () made of a material having a film density greater than that of the first protective film (); and a recess () including recess side surfaces () and a recess bottom surface () for separating the plurality of mesa-type compound semiconductor laminate portion. The recess side surface and the recess bottom surface are covered with the first protective film and the second protective film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile