The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Oct. 18, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Shawn Thomas, Chesterfield, MO (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10W 10/00 (2026.01); H10W 10/17 (2026.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/013 (2025.01); H10D 84/0151 (2025.01); H10D 84/038 (2025.01); H10W 10/014 (2026.01); H10W 10/17 (2026.01);
Abstract

Gate-all-around transistor devices and methods for manufacturing the same are provided. The semiconductor device includes a substrate. The substrate includes a plurality of isolation regions formed in the substrate, the plurality of isolation regions comprising an isolation material. The substrate further includes a buffer region formed in the substrate, the buffer region separating adjacent isolation regions. The semiconductor device further includes a plurality of fins, each fin formed on a corresponding isolation region of the plurality of isolation regions. Each fin includes a buffer layer contacting the isolation material and a plurality of silicon layers and a plurality of silicon germanium layers alternatingly arranged in a plurality of stacked pairs on the buffer layer.


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