The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Sep. 07, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Kazuki Minamikawa, Nomi Ishikawa, JP;
Daiki Yoshikawa, Kanazawa Ishikawa, JP;
Kazutoshi Nakamura, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Toshiba Electronic Devices & Storage Corporation, Kawasaki, JP;
Abstract
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, and a second electrode. The third semiconductor region is located on the second semiconductor region, and has a higher second-conductivity-type impurity concentration than the second semiconductor region. The second electrode is located on the third semiconductor region. The second electrode includes a first part and a second part. The first part is located in the second semiconductor region. The second part is positioned on the first part, and contacts the third semiconductor region in a second direction perpendicular to a first direction from the first electrode toward the first semiconductor region. A length of the first part is greater than a length of the second part in the second direction.