The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Sep. 05, 2022
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventor:
Shota Sambonsuge, Osaka, JP;
Assignee:
MITSUMI ELECTRIC CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01); H10D 64/23 (2025.01); H10D 64/62 (2025.01); H10D 30/01 (2025.01); H10W 72/00 (2026.01); H10W 72/29 (2026.01); H10W 72/59 (2026.01); H10W 72/90 (2026.01);
U.S. Cl.
CPC ...
H10D 64/252 (2025.01); H10D 30/668 (2025.01); H10D 62/8325 (2025.01); H10D 64/258 (2025.01); H10D 64/62 (2025.01); H10D 30/0297 (2025.01); H10W 72/01935 (2026.01); H10W 72/29 (2026.01); H10W 72/59 (2026.01); H10W 72/90 (2026.01); H10W 72/921 (2026.01); H10W 72/923 (2026.01); H10W 72/934 (2026.01); H10W 72/952 (2026.01);
Abstract
A silicon carbide semiconductor device includes a silicon carbide substrate having a first main surface; a first electrode formed on the first main surface; and a plating film formed on the first electrode, wherein a first irregularity is formed on a surface of the plating film, and H1/H2 is 0.10 or less, where H1 is a difference between a maximum value of a distance to a top of the first irregularity from the first main surface and a minimum value of a distance to a bottom of the first irregularity from the first main surface, and H2 is a minimum value of a thickness of the plating film.