The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Oct. 23, 2023
Hyundai Mobis Co., Ltd., Seoul, KR;
Ju Hwan Lee, Yongin-si, KR;
HYUNDAI MOBIS CO., LTD., Seoul, KR;
Abstract
A power semiconductor device includes a semiconductor layer formed of silicon carbide (SiC), a trench formed by etching the semiconductor layer, a gate formed in a manner that a partial region of the gate is buried in the trench and another partial region of the gate extends over the semiconductor layer, a shield region formed to surround a lower region of the trench, a well region disposed in the semiconductor layer to be in contact with a first side surface of the trench and an upper surface of the semiconductor layer, a source region disposed in the well region, and a shield connector formed to extend from an upper surface of the semiconductor layer to the shield region while contacting a second side surface opposite to the first side surface.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile