The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Dec. 08, 2022
Hyundai Motor Company, Seoul, KR;
Kia Corporation, Seoul, KR;
Jong Seok Lee, Suwon-si, KR;
HYUNDAI MOTOR COMPANY, Seoul, KR;
KIA CORPORATION, Seoul, KR;
Abstract
A power semiconductor device includes a semiconductor layer, a well region located inside the semiconductor layer and having a first conductivity type, a source region located on the well region and having a second conductivity type, a gate region in contact with a side surface of the well region and surrounding the well region, a drift region in contact with bottom surfaces of the well region and the gate region and having the second conductivity type, and a contact region located on the well region and having the first conductivity type. The drift region includes a protruding region in contact with another side surface of the well region. The power semiconductor device includes a source electrode in contact with each of the source region, the contact region, and the protruding region.