The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Aug. 16, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Ho Jin Lee, Hwaseong-si, KR;
Beom Jin Park, Hwaseong-si, KR;
Myoung Sun Lee, Seoul, KR;
Keun Hwi Cho, Seoul, KR;
Dong Won Kim, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes first to fourth active patterns extending in a horizontal first direction. The second active pattern is spaced apart from the first active pattern in the first direction. The third active pattern is spaced apart from the first active pattern in a horizontal second direction. The fourth active pattern is spaced apart from the third active pattern in the first direction. A field insulating layer surrounds a sidewall of each of the first to fourth active patterns. First to fourth pluralities of nanosheets are respectively disposed the first to fourth active patterns. A first gate electrode extends in the second direction, intersects each of the first and third active patterns, and surrounds the first and third pluralities of nanosheets. A second gate electrode extends in the second direction, intersects each of the second and fourth active patterns, and surrounds the second and fourth pluralities of nanosheets.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile