The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Sep. 07, 2023
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tatsuo Shimizu, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor device manufacturing method of embodiments includes: performing first ion implantation for implanting aluminum into a silicon carbide layer with a first dose amount; performing first heat treatment at a temperature equal to or more than 1600° C.; performing first etching process for etching a surface of the silicon carbide layer in an atmosphere containing plasma generated from a gas containing halogen and oxygen; performing second etching process for etching the surface in an atmosphere containing hydrogen plasma or atomic hydrogen; forming a silicon oxide film on the surface; and forming a gate electrode on the silicon oxide film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile