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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12684780 B1

PDFFull Text
Date of Patent:
Jul. 14, 2026

Filed:

Jan. 12, 2023

Memory device having hydrogen-ion bypass via on cell substrate and connected to pad structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Woo Yong Jeon, Anyang-si, KR;

Eun-Ji Kim, Seoul, KR;

Ji Young Kim, Seoul, KR;

Moo Rym Choi, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, KR;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Wael M Fahmy

Assistant Examiner:

Alice W Tang

Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 43/50 (2023.01);
U.S. Cl.
CPC ...
H10B 43/40 (2023.02); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor memory device includes a peripheral circuit structure including a peripheral circuit and a first bonding pad, the first bonding pad connected to the peripheral circuit, a cell structure on the peripheral circuit structure, the cell structure including a second bonding pad bonded to the first bonding pad, and a pad structure on the cell structure. The cell structure includes a cell substrate having a first face, a second face opposite to the first face, a first contact plug extending through the cell substrate and connected to an electrode layer, and a second contact plug extending through the cell substrate and connected to the cell substrate. Each of the first contact plug and the second contact plug is connected to the pad structure, and a bypass via is in contact with the pad structure on the second face.

Find Patent Forward Citations

Jeon, Woo. (2026). Memory device having hydrogen-ion bypass via on cell substrate and connected to pad structure (U.S. Patent No. 12684780). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12684780

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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