The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Sep. 22, 2023
Macronix International Co., Ltd., Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A memory device includes: an interconnect structure, a staircase structure, a dielectric layer and a stop structure. The interconnect structure is located above a substrate. The staircase structure is located above the interconnect structure. The dielectric layer is located above the interconnect structure and covers the staircase structure. The stop structure is located between the interconnect structure and the staircase structure, and between the interconnect structure and the dielectric layer, and the stop structure has an opening exposing the interconnect structure. The first contact extends through the dielectric layer and the opening, and is connected to the interconnect of the interconnect structure. The middle width of the opening is not equal to the top width of the opening, or the middle width of the opening is not equal to the bottom width of the opening. The memory device may be 3D NAND flash memory with high capacity and high performance.