The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jan. 20, 2023
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Sung Wook Jung, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02);
Abstract

A semiconductor memory device includes: a gate stack structure including a plurality of conductive patterns; a channel structure disposed inside the gate stack structure, the channel structure having a cross-sectional structure including a major axis and a minor axis, which faces in directions intersecting each other; and two or more bit lines extending in a direction intersecting the major axis of the channel structure, the two or more bit lines being arranged to be spaced apart from each other in a direction in which the major axis of the channel structure faces.


Find Patent Forward Citations

Jung, Sung. (2026). Semiconductor memory device with improved degree of integration (U.S. Patent No. 12684771). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12684771

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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