The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Sep. 05, 2024
Applicant:

Airoha Technology Corp., Hsinchu City, TW;

Inventors:

Chung-Ru Wu, Taoyuan City, TW;

Min-Hua Wu, Hsinchu County, TW;

Yi-Keng Hsieh, Hsinchu County, TW;

Assignee:

Airoha Technology Corp., Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03H 7/06 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6871 (2013.01); H03H 7/06 (2013.01);
Abstract

A source follower circuit includes a first MOS transistor, a second MOS transistor, a third MOS transistor, and a feedback loop circuit. Regarding the first MOS transistor, a gate terminal receives an input signal of the source follower circuit, and a source terminal outputs an output signal of the source follower circuit. Regarding the second MOS transistor, a gate terminal is coupled to a bias voltage, a source terminal is coupled to a first reference voltage, and a drain terminal is coupled to the source terminal of the first MOS transistor. Regarding the third MOS transistor, it is a self-biased diode-connected MOS transistor with its gate terminal coupled to its drain terminal. The drain terminal of the third MOS transistor is coupled to a drain terminal of the first MOS transistor, and a source terminal of the third MOS transistor is coupled to a second reference voltage.


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