The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jan. 16, 2025
Applicant:

Honeycomb Battery Company, Dayton, OH (US);

Inventor:

Bor Z. Jang, Centerville, OH (US);

Assignee:

Honeycomb Battery Company, Dayton, OH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/184 (2017.01); C01B 32/194 (2017.01); C01B 32/348 (2017.01); C01B 33/03 (2006.01); C23C 16/24 (2006.01); C23C 16/44 (2006.01); H01M 4/04 (2006.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/62 (2006.01); H01M 10/42 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); C01B 32/184 (2017.08); C01B 32/194 (2017.08); C01B 32/348 (2017.08); C01B 33/03 (2013.01); C23C 16/24 (2013.01); C23C 16/4417 (2013.01); H01M 4/0404 (2013.01); H01M 4/0421 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/625 (2013.01); H01M 10/4235 (2013.01); C01B 2204/22 (2013.01); C01P 2004/80 (2013.01); C01P 2006/40 (2013.01); H01M 2004/027 (2013.01);
Abstract

A method of producing multiple particulates having pores containing Si therein, comprising: (a) providing a porous conductive host structure having from 5% to 99.9% of pores; (b) introducing a halogen gas that chemically reacts with Si at a first temperature to form a silicon halide, wherein the silicon halide is selected from SiF, SiCl, SiI, SiBr, and/or SiXZ, wherein X and Z are each a halogen element and a=1-3, b=1-3, and a+b=4; (c) vaporizing the silicon halide to form a vapor phase and directing the silicon halide vapor into pores of the host and facilitating the silicon halide to decompose into a halogen gas product and solid Si particles or coating deposited at a second temperature in the pores to form a Si-infiltrated porous host structure; and (d) optionally breaking and reducing said Si-infiltrated host structure into smaller porous particles.


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