The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Mar. 31, 2022
Applicants:
Lot Ces Co., Ltd., Osan-si, KR;
Lot Vacuum Co., Ltd., Osan-si, KR;
Inventors:
Assignees:
LOT CES CO., LTD., Osan-si, KR;
LOT VACUUM CO., LTD., Osan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01); C23C 16/50 (2006.01); H10P 14/69 (2026.01);
U.S. Cl.
CPC ...
H01J 37/32844 (2013.01); C23C 16/26 (2013.01); C23C 16/4412 (2013.01); C23C 16/50 (2013.01); H01J 37/32449 (2013.01); H10P 14/6902 (2026.01); H01J 2237/182 (2013.01); H01J 2237/332 (2013.01);
Abstract
A semiconductor manufacturing facility includes: a process chamber in which an amorphous carbon layer (ACL) process in which amorphous carbon is deposited so that an ACL is formed, is performed; a vacuum pump in which a residual gas generated in the process chamber is discharged from the process chamber while the ACL process is performed; a chamber exhaust pipe through which the process chamber and the vacuum pump communicate with each other; a plasma reactor configured to form a plasma reaction region using plasma; and a gas supplying device configured to supply a treatment gas to the plasma reactor.