The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Jun. 04, 2024
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Jung Shik Jang, Icheon-si Gyeonggi-do, KR;

Won Geun Choi, Icheon-si Gyeonggi-do, KR;

In Su Park, Icheon-si Gyeonggi-do, KR;

Woo Pyo Jeong, Icheon-si Gyeonggi-do, KR;

Jung Dal Choi, Icheon-si Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/0483 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01);
Abstract

The present disclosure relates to method of operating a memory device that includes programming program data by distributing the program data to a first memory cell group corresponding to a first drain select line and a second memory cell group corresponding to a second drain select line during a program operation of a selected memory block, reading memory cells included in each of the first memory cell group and the second memory cell group during a read operation of the selected memory block, and determining threshold voltages for the first memory cell group according to a read result for the first memory cell group and threshold voltages for the second memory cell group according to a read result for the second memory cell group and outputting data codes corresponding to combinations of the threshold voltages during a read operation of the selected memory block.


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