The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Mar. 29, 2024
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventor:
Hideyuki Kataoka, Yokohama Kanagawa, JP;
Assignee:
Kioxia Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); H10B 43/27 (2023.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/56 (2013.01); G11C 16/04 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); H10B 43/27 (2023.02); H10D 30/021 (2025.01);
Abstract
According to one embodiment, a semiconductor memory device includes a first memory cell; a word line coupled to a gate of the first memory cell; a first transistor having a first end coupled to the word line; and a control circuit configured to, in a read operation, apply a first voltage, which is positive, to a back gate of the first transistor.
Kataoka, Hideyuki. (2026). Semiconductor memory device applying voltage to a back gate of a transistor coupled to a word line (U.S. Patent No. 12682960). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12682960
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile