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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12681344 B1

PDFFull Text
Date of Patent:
Jul. 14, 2026

Filed:

Jul. 31, 2020

Photodetectors integrated into thin-film transistor backplanes

Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Ching-Sang Chuang, Sunnyvale, CA (US);

Jiun-Jye Chang, Cupertino, CA (US);

PO-Chun Yeh, Cupertino, CA (US);

Shih Chang Chang, Cupertino, CA (US);

Ting-Kuo Chang, San Jose, CA (US);

Yun Wang, Cupertino, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:

Brownstein Hyatt Farber Schreck, LLP

Primary Examiner:

Charles S Chang

Int. Cl.
CPC ...
G02F 1/133 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H10D 30/67 (2025.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10K 39/32 (2023.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 59/65 (2023.01); H10K 59/80 (2023.01); H10K 65/00 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
G02F 1/13318 (2013.01); G02F 1/133308 (2013.01); G02F 1/13338 (2013.01); G02F 1/134309 (2013.01); G02F 1/13439 (2013.01); G02F 1/1368 (2013.01); H10D 30/6731 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10F 39/198 (2025.01); H10F 39/8033 (2025.01); H10F 39/80377 (2025.01); H10K 39/32 (2023.02); H10K 59/12 (2023.02); H10K 59/1213 (2023.02); H10K 59/65 (2023.02); H10K 59/871 (2023.02); H10K 65/00 (2023.02); H10K 77/111 (2023.02); G02F 1/133331 (2021.01); G02F 1/133357 (2021.01); H10K 2102/3026 (2023.02); H10K 2102/311 (2023.02);
Abstract

An electronic device includes a stack, and the stack includes a substrate, and a multi-layer structure deposited on the substrate and including a set of TFTs. The electronic device further includes a photodetector attached to the multi-layer structure and including an organic photosensitive material. The organic photosensitive material is electrically connected to a TFT in the set of TFTs. Another electronic device includes a stack, and the stack includes a substrate, and a multi-layer structure deposited on the substrate. The multi-layer structure includes a first set of layers including a set of TFTs, and a second set of layers including a PIN diode. The PIN diode is configured to operate as a photodetector and receive at least one wavelength of electromagnetic radiation, and is electrically connected to a TFT in the set of TFTs.

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