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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12679774 B1

PDFFull Text
Date of Patent:
Jul. 14, 2026

Filed:

Sep. 18, 2020

Method for manufacturing silicon nitride substrate

Applicant:

Oci Company Ltd., Seoul, KR;

Inventors:

Seung Yeon Lee, Gyeonggi-do, KR;

Seunggwan Lee, Gyeonggi-do, KR;

Eun Ok Chi, Gyeonggi-do, KR;

Assignee:

OCI Company Ltd., Seoul, KR;

Attorney:

HoustonHogle LLP

Primary Examiner:

Jamel M Nelson

Assistant Examiner:

Andrés E. Behrens, Jr.

Int. Cl.
CPC ...
C04B 35/00 (2006.01); C04B 35/593 (2006.01); C04B 35/626 (2006.01); C04B 35/636 (2006.01); C04B 41/00 (2006.01); C04B 41/45 (2006.01); B32B 3/00 (2006.01); B32B 3/30 (2006.01); B32B 5/00 (2006.01); B32B 5/30 (2006.01); B32B 9/00 (2006.01); B32B 9/04 (2006.01); B32B 18/00 (2006.01); C04B 35/584 (2006.01); C04B 35/622 (2006.01); C04B 103/00 (2006.01); C04B 103/30 (2006.01);
U.S. Cl.
CPC ...
C04B 35/5935 (2013.01); C04B 35/6261 (2013.01); C04B 35/62685 (2013.01); C04B 35/6365 (2013.01); C04B 41/4501 (2013.01); B32B 3/00 (2013.01); B32B 3/30 (2013.01); B32B 5/00 (2013.01); B32B 5/30 (2013.01); B32B 9/00 (2013.01); B32B 9/04 (2013.01); B32B 18/00 (2013.01); C04B 35/00 (2013.01); C04B 35/584 (2013.01); C04B 35/622 (2013.01); C04B 41/00 (2013.01); C04B 2103/00 (2013.01); C04B 2103/30 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/945 (2013.01); C04B 2237/368 (2013.01);
Abstract

The present invention relates to a method for manufacturing a silicon nitride substrate and, more specifically, comprises the steps of: forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent; molding the slurry to form sheets; sandwiching at least one of the sheets between a lower plate and an upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate comprises a plurality of protrusions provided on one surface thereof, and the protrusions extend in parallel to each other in one direction.

Find Patent Forward Citations

Lee, Seung. (2026). Method for manufacturing silicon nitride substrate (U.S. Patent No. 12679774). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12679774

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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