The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Apr. 24, 2023
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Hodol Yoo, Seoul, KR;

Seongun Eom, Seoul, KR;

Yongsoo Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01); H10B 80/00 (2023.01); H10W 70/65 (2026.01); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 70/60 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 74/15 (2026.01); H10W 90/28 (2026.01);
U.S. Cl.
CPC ...
H10W 70/65 (2026.01); H10B 80/00 (2023.02); H10W 70/685 (2026.01); H10W 90/00 (2026.01); H10W 90/401 (2026.01); H10W 90/701 (2026.01); H10W 70/60 (2026.01); H10W 72/01 (2026.01); H10W 72/287 (2026.01); H10W 72/823 (2026.01); H10W 74/15 (2026.01); H10W 90/28 (2026.01); H10W 90/722 (2026.01); H10W 90/724 (2026.01); H10W 90/734 (2026.01);
Abstract

A semiconductor package substrate including a substrate; a first protective layer disposed on the substrate and including a through hole; and a second protective layer disposed inside the through hole of the first protective layer and spaced apart from the first protective layer, wherein a first edge of the first protective layer faces a first edge of the second protective layer, wherein a space between the first edge of the first protective layer and the first edge of the second protective layer includes at least a first separation region and a second separation region, and wherein a first width of the space in the first separation region is different than a second width of the space in the second separation region.


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