The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

May. 19, 2021
Applicant:

Central Glass Company, Limited, Ube, JP;

Inventors:

Yuzo Okumura, Ube, JP;

Yuki Fukui, Ube, JP;

Saori Shiota, Ube, JP;

Yoshiharu Terui, Ube, JP;

Soichi Kumon, Ube, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 70/00 (2026.01); C09D 7/20 (2018.01); C09D 183/08 (2006.01);
U.S. Cl.
CPC ...
H10P 70/23 (2026.01); C09D 7/20 (2018.01); C09D 183/08 (2013.01);
Abstract

A surface treatment method for a semiconductor substrate of the present invention is a treatment method of treating a main surface of a semiconductor substrate that has, on the main surface of the substrate, a pattern formation region in which a pattern having a concave-convex structure with a pattern dimension of 30 nm or less is formed and a pattern non-formation region in which no pattern is formed, the method including a surface treatment step of bringing a surface treatment agent composition including a silylating agent into contact with the pattern formation region and the pattern non-formation region on the main surface of the semiconductor substrate, in which, with respect to a surface of the pattern non-formation region after the surface treatment step, an IPA contact angle with 2-propanol is 2° or more at a room temperature of 25° C. and/or a water contact angle with pure water is 50° or more at the room temperature of 25° C.


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