The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Sep. 19, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sieun Chae, San Jose, CA (US);

Susmit Singha Roy, Campbell, CA (US);

Abhijit Basu Mallick, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 14/20 (2026.01); H10P 14/60 (2026.01); H10P 14/692 (2026.01); H10P 95/90 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6319 (2026.01); H10P 14/3411 (2026.01); H10P 14/69215 (2026.01); H10P 95/90 (2026.01);
Abstract

Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region and forming a first layer of material on the substrate. The first layer of material may include silicon oxide. The methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber and forming a plasma of the germanium-containing precursor in the processing region. Forming the plasma of the germanium-containing precursor may be performed at a plasma power of greater than or about 500 W. The methods may include forming a second layer of material on the substrate. The second layer of material may include germanium oxide.


Find Patent Forward Citations

Chae, Sieun. (2026). Germanium and silicon stacks for 3d nand (U.S. Patent No. 12677609). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12677609

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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