logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12677602 B1

PDFFull Text
Date of Patent:
Jul. 07, 2026

Filed:

Jun. 28, 2023

Device and method for high speed metamagnetic resistive switching

Applicant:

The Government of the United States As Represented BY the Director, National Security Agency, Ft. George G. Meade, MD (US);

Inventors:

Adam L. Friedman, Silver Spring, MD (US);

Aubrey T. Hanbicki, Washington, DC (US);

Nicholas A. Blumenschein, Silver Spring, MD (US);

Gregory M. Stephen, College Park, MD (US);

Steven P. Bennett, Owings, MD (US);

Cory D. Cress, Springfield, VA (US);

Samuel Lagasse, Waldorf, MD (US);

Assignee:

The Government of the United States as represented by the Director, National Security Agency, Ft. George G. Meade, MD (US);

Attorney:
Primary Examiner:

Eliseo Ramos Feliciano

Assistant Examiner:

Brad A Knudson

Int. Cl.
CPC ...
H10N 70/20 (2023.01); G11C 11/16 (2006.01); H01F 1/047 (2006.01); H01F 10/00 (2006.01); H01F 10/13 (2006.01); H10N 50/10 (2023.01); H10N 70/00 (2023.01); G11C 13/00 (2006.01); H01F 1/00 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/20 (2023.02); G11C 11/16 (2013.01); H01F 1/047 (2013.01); H01F 10/002 (2013.01); H01F 10/136 (2013.01); H10N 50/10 (2023.02); H10N 70/881 (2023.02); G11C 13/0002 (2013.01); H01F 1/00 (2013.01); H10B 63/20 (2023.02); H10N 70/026 (2023.02); H10N 70/257 (2023.02);
Abstract

A device and method for high speed metamagnetic resistive switching provides a metamagnetic phase transitioning (MPT) portion formed on a substrate between terminals. The MPT portion is tuned for temperature-responsive transitions between magnetic phases through a transition phase. The phases are delineated by phase boundaries each traversed at different critical temperatures depending on direction of traversal. The critical temperatures of each phase boundary are mutually offset by a hysteretic shift. The MPT portion is boosted across one phase boundary responsive to thermal actuation pulsed in a first direction to reach or exceed both critical temperatures of that phase boundary in the first direction, and boosted across the other phase boundary responsive to thermal actuation pulsed in a second direction to reach or exceed both critical temperatures of that phase boundary in the second direction. The electrical conduction path is thereby adjusted in resistivity for switching between ON and OFF states.

Find Patent Forward Citations

Loading…