The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Nov. 06, 2023
Hamamatsu Photonics K.k., Hamamatsu, JP;
Kosuke Hironaka, Hamamatsu, JP;
Shigeo Hara, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;
Abstract
A method for manufacturing an organic semiconductor element includes a process of forming a first terminal on a main surface of a substrate, a process of forming a first electrode on the main surface, a process of forming an organic semiconductor layer on the first electrode, a process of forming a second electrode on the organic semiconductor layer, a process of forming a sacrificial layer in a predetermined region on the main surface, a process of forming a barrier layer on the main surface by an ALD method to cover the first terminal, the first electrode, the second electrode, the organic semiconductor layer, and the sacrificial layer, and a process of removing the sacrificial layer and a portion of the barrier layer that covers the sacrificial layer. The organic semiconductor layer and the sacrificial layer are apart from each other after the process of forming the barrier layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile