The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Jan. 18, 2024
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Gong Chen, Xiamen, CN;
Yashu Zang, Xiamen, CN;
Jianbin Chen, Xiamen, CN;
Bin Jiang, Xiamen, CN;
Chung-Ying Chang, Xiamen, CN;
Shao-Hua Huang, Xiamen, CN;
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Abstract
Provided are an ultraviolet light emitting diode (LED) and a manufacturing method thereof. The manufacturing method includes: providing an LED wafer including a substrate and a semiconductor stacked layer, the semiconductor stacked layer has a lower surface and an upper surface, the semiconductor stacked layer includes a first semiconductor layer, a light emitting layer and a second semiconductor layer; focusing a first laser beam and a second laser beam into the substrate, a focusing position of the first laser beam is closer to the lower surface than that of the second laser beam, the first laser beam is focused to form at least one first laser cutting line, laser scratches of each first laser cutting line are quasi-circular, and the at least one first laser cutting line includes a laser cutting line closest to the lower surface; and separating the LED wafer to form LED chips.