The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Jan. 06, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Tsutomu Imoto, Kanagawa, JP;

Masahiro Hosoya, Kanagawa, JP;

Yusuke Otake, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/48 (2006.01); G01S 7/4865 (2020.01); G01S 17/10 (2020.01); H10F 39/00 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10F 39/809 (2025.01); G01S 7/4865 (2013.01); G01S 17/10 (2013.01); H10W 90/792 (2026.01);
Abstract

Provided is a sensor device that includes a first chip including a first semiconductor substrate and a first wire formation layer and including a pixel that includes a photoelectric conversion element, and a first transfer gate element and a second transfer gate element configured to transfer accumulated charges of the photoelectric conversion element, and a second chip including a second semiconductor substrate and a second wire formation layer, in which a first wire electrically connected to the first transfer gate element, a second wire electrically connected to the second transfer gate element, and a third wire electrically connected to a ground are formed. Each of the first wire, the second wire, and the third wire is formed by bonding a first portion of the first wire formation layer and extending in a first direction and a second portion of the second wire formation layer and extending in the first direction.


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