The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Aug. 04, 2023
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Sung Ju Choi, Seoul, KR;

Jung Seok Seo, Seoul, KR;

Jae Yoon Park, Seoul, KR;

Seo Yeon Im, Seoul, KR;

Jin Won Jung, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/12 (2023.01); H10K 59/126 (2023.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); H10D 86/0223 (2025.01); H10D 86/423 (2025.01); H10D 86/481 (2025.01); H10K 59/1201 (2023.02); H10K 59/126 (2023.02);
Abstract

The disclosure provides an array substrate of a thin film transistor including an oxide semiconductor pattern, and a display device using the same. The thin film transistor array substrate includes a substrate including an active area and a non-active area disposed around the active area, and a first thin film transistor disposed on the substrate. The first thin film transistor includes a first oxide semiconductor pattern disposed on the substrate, a first gate electrode disposed under the first oxide semiconductor pattern while overlapping with the first oxide semiconductor pattern, a first source electrode and a first drain electrode disposed on the first oxide semiconductor pattern and connected to the first oxide semiconductor pattern, and a first light shielding pattern disposed over the first oxide semiconductor pattern and electrically connected to one of the first source electrode and the first drain electrode while overlapping with the first oxide semiconductor pattern.


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