The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Sep. 07, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sangmin Kang, Suwon-si, KR;

Sunggil Kim, Suwon-si, KR;

Kyungwook Park, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/83 (2025.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10D 64/23 (2025.01); H10D 64/62 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10D 62/83 (2025.01); H10D 64/252 (2025.01); H10D 64/62 (2025.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10W 90/792 (2026.01);
Abstract

A semiconductor device includes: a first substrate structure including a first substrate, circuit devices, and first bonding pads; and a second substrate structure connected to the first substrate structure. The second substrate structure includes: a source structure; gate electrodes stacked and spaced apart from each other below the source structure in a first direction; first contact plugs electrically connected to the gate electrodes and extending in the first direction; a second contact plug extending in the first direction in an external side of the gate electrodes and electrically connected to the source structure through an upper end; a diffusion barrier between the second contact plug and the source structure, wherein a level of a lower end thereof is higher than a level of an uppermost surface of the gate electrodes; and second bonding pads below the gate electrodes and connected to the first bonding pads.


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