The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Apr. 27, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Kiseok Lee, Hwaseong-si, KR;
Keunnam Kim, Yongin-si, KR;
Hui-Jung Kim, Seongnam-si, KR;
Min Hee Cho, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01); H10H 20/01 (2025.01); H10H 20/817 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01); H10D 30/6756 (2025.01); H10H 20/0145 (2025.01); H10H 20/817 (2025.01);
Abstract
A semiconductor device includes a substrate, a gate electrode on the substrate, a channel layer between the substrate and the gate electrode, the channel layer including an amorphous oxide semiconductor, and a width of the gate electrode being greater than a width of the channel layer, a first conductive electrode connected to a first side surface of the channel layer, and a second conductive electrode connected to a second side surface of the channel layer.