The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Sep. 08, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Wandon Kim, Suwon-si, KR;
Jaeseoung Park, Suwon-si, KR;
Hyunwoo Kim, Suwon-si, KR;
Hyunbae Lee, Suwon-si, KR;
Jeonghyuk Yim, Suwon-si, KR;
Hyoseok Choi, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes an active region extending in a first direction, a gate structure extending in a second direction, a source/drain region on the active region, a first contact structure connected to the source/drain region, and a second contact structure connected to the first contact structure. The second contact structure includes a first layer including a first grain and a second layer including second grains on the first layer. Within the first layer, a maximum vertical distance between a lowermost end of the first grain and an uppermost end of the first grain is equal to a vertical distance between a lowermost end of the first layer and an uppermost end of the first layer. A size of the first grain is greater than a size of each of the second grains. A width of the first layer is greater than a width of the first contact structure.