Semiconductor devices with selectively doped gate electrode structure

Abstract

Semiconductor devices including selectively doped gate electrodes are described. The semiconductor device comprises a substrate including a body region and a drift region, a gate dielectric layer on the substrate, the gate dielectric layer extending over the body region and the drift region, and a field relief dielectric layer on the drift region, the field relief dielectric layer laterally abutting the gate dielectric layer at a location over the drift region. The semiconductor device also includes a gate electrode having an n-doped first portion, a p-doped second portion, and an n-doped third portion. The selectively doped second portion of the gate electrode is located over an intersection between the gate dielectric layer and the field relief dielectric layer.