The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Apr. 06, 2022
International Business Machines Corporation, Armonk, NY (US);
Eunjung Cha, Zurich, CH;
Bogdan Cezar Zota, Rueschlikon, CH;
Kirsten Emilie Moselund, Rüschlikon, CH;
Katarzyna Hnida-Gut, Rueschlikon, CH;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
One or more devices and/or methods provided herein relate to a method for fabricating a semiconductor device having a co-integrated RTD and HEMT. A semiconductor device can comprise an RTD and an HEMT that are co-integrated along a substrate. A fabrication method can comprise providing a heterostructure comprising a plurality of transistor layers of an HEMT, forming on the vertical stack a template structure comprising an opening, a cavity and a seed structure, the seed structure comprising a seed material and a seed surface, and growing a plurality of diode layers of an RTD within the cavity of the template structure from the seed surface, wherein the RTD and HEMT are co-integrated along a substrate.