Gallium nitride-based high electron mobility transistor epitaxial wafer with an ingan/gan cap layer comprising first sublayers doped with a main doping element and second sublayers doped with the first doping element and an auxiliary doping element, and preparation method therefor

Abstract

The present application relates to the technical field of semiconductors, and provides a gallium nitride (GaN)-based high electron mobility transistor epitaxial wafer and a preparation method therefor. The GaN-based high electron mobility transistor epitaxial wafer comprises a substrate, and a buffer layer, a high-resistance buffer layer, a channel layer, an AlGaN barrier layer, and a cap layer which are stacked on the substrate; the cap layer comprises first sublayers and second sublayers which are grown alternately; the first sublayers are GaN layers; the second sublayers are InGaN layers; both the first sublayers and the second sublayers are doped with a main doping element; the main doping element is at least one of Be and Mg; the second sublayers are further doped with an auxiliary doping element; the auxiliary doping element is at least one of O, Mg, Si and Zn.