The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Sep. 15, 2021
Applicants:

Dynex Semiconductor Limited, Lincoln, GB;

Zhuzhou Crrc Times Semiconductor Co. Ltd, Zhuzhou, CN;

Inventors:

Luther-King Ngwendson, Lincoln, GB;

Ian Deviny, Lincoln, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 62/17 (2025.01); H10P 50/28 (2026.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 12/038 (2025.01); H10D 62/393 (2025.01); H10P 50/283 (2026.01);
Abstract

We herein describe a gate controlled semiconductor device having a plurality of gate trenches, in which the plurality of gate trenches are laterally spaced from each other in a first dimension, current flows in a second dimension substantially transverse to the first dimension, and the plurality of gate trenches each extend in a third dimension of the device. A secondary trench extends in the first dimension of the device, and the secondary trench contacts each gate trench of the plurality of gate trenches at a plurality of intersection regions laterally spaced along the secondary trench.


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