The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Aug. 17, 2023
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H10B 51/10 (2023.01); H10D 30/69 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H10B 51/10 (2023.02); H10D 30/701 (2025.01); H10D 64/689 (2025.01);
Abstract
A three-dimensional ferroelectric memory device includes a channel on a substrate and extending in a vertical direction substantially perpendicular to an upper surface of the substrate, a gate insulation pattern and a conductive pattern stacked on and surrounding a sidewall of the channel in a horizontal direction substantially parallel to the upper surface of the substrate, a ferroelectric pattern contacting a portion of an outer sidewall of the conductive pattern, a gate electrode contacting the ferroelectric pattern, and first and second source/drain patterns contacting lower and upper surfaces, respectively, of the channel.