The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
Dec. 16, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Hyo Sub Yeom, Icheon-si, KR;
Seung Ju Oh, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/00 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 43/00 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/40 (2023.02); H10B 41/00 (2023.02); H10B 43/00 (2023.02);
Abstract
There is provided a semiconductor memory device. The semiconductor memory device includes a metal pattern including a first line part extending in a first direction and a second line part which is connected to the first line part and extends in a second direction to intersect with the first line part, and a source structure which has a trench. The metal pattern is formed in the trench and the source structure is in contact with a sidewall of the metal pattern.
Quick Actions:
Yeom, Hyo. (2026). Semiconductor memory device (U.S. Patent No. 12677415). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12677415
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile