The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
May. 29, 2024
Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;
UNISANTIS ELECTRONICS SINGAPORE PTE. LTD., Singapore, SG;
Abstract
In a semiconductor memory device, an n-type semiconductor layer is formed on a p-type semiconductor region on a substrate, a p-type first semiconductor layer having a columnar shape and concave top surface extends vertically from part of the n-type semiconductor layer, the p-type first semiconductor layer and n-type semiconductor layer are partially covered with an insulating layer, a first gate insulating layer is placed in contact with the p-type first semiconductor layer, a first gate conductor layer is placed in contact with the first gate insulating layer, and a second gate insulating layer, a second gate conductor layer, and an access transistor with an n+ layer provided on both sides are installed along a surface of the p-type first semiconductor layer.