The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2026
Filed:
May. 24, 2024
Mitsubishi Electric Corporation, Tokyo, JP;
Masayoshi Hirao, Fukuoka, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
To improve the measurement accuracy of feedback capacitance of a semiconductor device. Between a gate terminal of a semiconductor device subject to measurement and an Lc terminal of an LCR meter, a first wiring that is passed through a core of a transformer once and connected between a gate terminal and a source terminal and a second wiring wound N times around a core of the transformer, and one end is connected to the Lc terminal and the other end is grounded are provided. when ω represents an angular frequency of the AC signal applied to the drain terminal of the semiconductor device, Lrepresents inductance of the first wiring, Lrepresents inductance of the second wiring, and Crepresents gate-source parasitic capacitance of the semiconductor device, a relationship of ωL<1/(ωC), and ωL/N<1/(ωC) are satisfied.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile