The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Dec. 18, 2017
Applicant:

Universita' Degli Studi Di Bari Aldo Moro, Bari, IT;

Inventors:

Luisa Torsi, Bari, IT;

Gerardo Palazzo, Bari, IT;

Gaetano Scamarcio, Bari, IT;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 33/543 (2006.01); G01N 27/414 (2006.01); G01N 33/551 (2006.01); G01N 33/68 (2006.01);
U.S. Cl.
CPC ...
G01N 33/5438 (2013.01); G01N 27/4145 (2013.01); G01N 33/54393 (2013.01); G01N 33/551 (2013.01); G01N 33/6854 (2013.01); G01N 2610/00 (2013.01);
Abstract

A method of functionalization of a gate electrode of a field-effect transistor sensor includes forming a layer of biological recognition elements on a surface of said gate electrode, wherein said layer of biological recognition elements includes a self-assembled structure of one or more specific-binding-pair-forming substances (anti-hIg, anti-IgG, anti-IgM). The layer of biological recognition elements is treated with a solution containing a blocking agent to fill vacancies and prevent nonspecific binding in the self-assembled structure. One or more specific-binding-pair-forming substances immobilized in said layer of biological recognition elements are packed at a density of 0.1×10μmand 10×10μm, preferably between 1×10μmand 2×10μm.


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