The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Jun. 28, 2023
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Hiroaki Kobayashi, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H10W 70/66 (2026.01); H10W 70/685 (2026.01); H10W 74/10 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10W 90/00 (2026.01); H10W 70/662 (2026.01); H10W 70/685 (2026.01); H10W 74/117 (2026.01); H10W 90/725 (2026.01);
Abstract

Embodiments of the present disclosure provide a technique advantageous to an improvement in performance of a semiconductor device. The semiconductor device includes a first monocrystalline semiconductor layer on which a first semiconductor element is arranged, a second monocrystalline semiconductor layer on which a second semiconductor element is arranged, and a thin film transistor electrically connected to the first semiconductor element without an intervention of another semiconductor element arranged on the first monocrystalline semiconductor layer and electrically connected to the second semiconductor element without an intervention of another semiconductor element arranged on the second monocrystalline semiconductor layer.


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