The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Aug. 02, 2023
Applicant:
Littelfuse Semiconductor (Wuxi) Co., Ltd., Wuxi, CN;
Inventors:
Assignee:
Littelfuse Semiconductor (Wuxi) Co., Ltd., Wuxi, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 74/10 (2026.01); H10D 8/00 (2025.01); H10W 74/40 (2026.01); H10W 74/43 (2026.01);
U.S. Cl.
CPC ...
H10W 74/137 (2026.01); H10W 74/147 (2026.01); H10W 74/481 (2026.01); H10D 8/422 (2025.01); H10W 74/43 (2026.01);
Abstract
An overvoltage protection device may include an n-type semiconductor substrate, a p-type layer disposed atop the n-type semiconductor substrate, and a passivation region formed in the n-type semiconductor substrate and the p-type layer, wherein the passivation region comprises a semi-insulating polycrystalline silicon (SIPOS) layer.
Quick Actions:
Zhang, Glenda. (2026). Mesa device with stack thin film passivation (U.S. Patent No. 12672581). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12672581
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile